DocumentCode
936167
Title
Design technique for microwave-transistor power amplifiers
Author
Kotzebue, K.L.
Author_Institution
University of California, Department of Electrical Engineering & Computer Science, Santa Barbara, USA
Volume
12
Issue
3
fYear
1976
Firstpage
74
Lastpage
75
Abstract
A design technique has been developed which yields the added-power circuit efficiency of a microwave-transistor power amplifier with arbitrary output termination. Good agreement between theory and experiment has been achieved with a 1 W bipolar junction transistor operating at 1.3 GHz.
Keywords
bipolar transistors; microwave amplifiers; power amplifiers; solid-state microwave circuits; 1 W bipolar junction transistor; 1.3 GHz; added power circuit efficiency; arbitrary output termination; microwave transistor power amplifiers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19760060
Filename
4239607
Link To Document