• DocumentCode
    936527
  • Title

    Coherent Gunn oscillations in GaxIn1-xSb

  • Author

    Segawa, K. ; Miki, H. ; Otsubo, M. ; Shirahata, K. ; Fujibayashi, K.

  • Author_Institution
    Mitsubishi Electric Corporation, Central Research Laboratory, Itami, Japan
  • Volume
    12
  • Issue
    5
  • fYear
    1976
  • Firstpage
    124
  • Lastpage
    125
  • Abstract
    Gunn oscillations in GaxIn1-xSb were observed in the composition range 0.40 ⩽ X ⩽ 0.91. Negative resistance exists in the same composition range investigated. The threshold field for the current oscillation was in the range 430--790 V/cm.
  • Keywords
    Gunn effect; III-V semiconductors; gallium compounds; indium compounds; negative resistance effects; GaxIn1-xSb; coherent Gunn oscillations; current oscillation; negative resistance; threshold field;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760098
  • Filename
    4239647
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=936527