Title :
100 and 160 Gbit/s operation of uni-travelling-carrier photodiode module
Author :
Muramoto, Y. ; Yoshino, K. ; Kodama, S. ; Hirota, Y. ; Ito, H. ; Ishibashi, T.
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
fDate :
3/18/2004 12:00:00 AM
Abstract :
A uni-travelling-carrier photodiode module with a 1 mm connector output port has been developed. The fabricated module shows clear eye opening at data rates of 100 and 160 Gbit/s. A high output peak voltage of 0.8 V is also achieved at a data rate of 100 Gbit/s, demonstrating a significant advantage of the uni-travelling-carrier photodiode.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; modules; optical communication equipment; photodiodes; 0.8 V; 100 Gbit/s; 160 Gbit/s; InP-InGaAs; connector output port; eye opening; unitravelling carrier photodiode module;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040249
