Title :
Comparison of high-efficiency GaAs IMPATT designs
Author_Institution :
Rockwell International, Science Center, Thousand Oaks, USA
Abstract :
Calculations of maximum generated r.f. powers are presented for GaAs single-drift Read, double-drift Read and hybrid Read structures at 10 GHz. The single-drift Read diode gives the highest output power in c.w. applications, and the double-drift design is superior in pulsed operation.
Keywords :
IMPATT diodes; solid-state microwave devices; 10 GHz; CW applications; RF power; Read diode; double drift Read structures; high efficiency GaAs IMPATT designs; hybrid Read structures; output power; pulsed operation; single drift Read structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760112
