Title :
Demonstration of 1789 V, 6.68 mΩ · cm2 4H-SiC merged-PiN-Schottky diodes
Author :
Zhao, J.H. ; Fursin, L. ; Jiao, L. ; Li, X. ; Burke, T.
Author_Institution :
Dept. of ECE, Rutgers Univ., Piscataway, NJ, USA
fDate :
3/18/2004 12:00:00 AM
Abstract :
The design, fabrication and characterisation of a high performance 4H-SiC diode of 1789 V-6.6 A with a low differential specific-on resistance (RSP_ON) of 6.68 mΩ · cm2, based on a 10.3 μm 4H-SiC blocking layer doped to 6.6×1015 cm-3, is reported. The corresponding figure-of-merit of VB2/RSP_ON for this diode is 479 MW/cm2, which substantially surpasses previous records for all other MPS diodes.
Keywords :
Schottky diodes; electrical resistivity; p-i-n diodes; silicon compounds; wide band gap semiconductors; 10.3 micron; 1789 V; 4H-SiC blocking layer; 6.6 A; PiN-Schottky diodes; SiC; electrical resistivity; figure-of-merit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040254
