Title :
Nonlinear gain effects due to carrier heating and spectral holeburning in strained-quantum-well lasers
Author :
Willatzen, M. ; Takahashi, T. ; Arakawa, Y.
Author_Institution :
Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan
fDate :
7/1/1992 12:00:00 AM
Abstract :
The authors present numerical results for the nonlinear gain effects due to carrier heating and spectral holeburning in 50 AA strained In/sub x/Ga/sub 1-x/As/Al/sub 0.3/Ga/sub 0.7/As quantum-well lasers. Calculations are performed on the basis of a 4*4 matrix system consisting of the usual Kohn-Luttinger Hamiltonian and a strain Hamiltonian for the valence band structure. In addition, the authors perform a small-signal analysis based on four dynamic equations for the photon density, carrier density, and two supplementary equations for the electron and hole energy densities to obtain information about nonlinear gain coefficients. The results indicate that the nonlinear gain is enhanced with the strain mainly due to the rapid increase of the carrier heating effect as the carrier density at the lasing threshold decreases, and that carrier heating is about five times as important compared to spectral holeburning.<>
Keywords :
carrier density; laser theory; optical hole burning; semiconductor junction lasers; 4*4 matrix system; 50 AA; InGaAs-Al/sub 0.3/Ga/sub 0.7/As; Kohn-Luttinger Hamiltonian; carrier density; carrier heating; dynamic equations; electron energy densities; hole energy densities; lasing threshold; nonlinear gain coefficients; nonlinear gain effects; numerical results; photon density; small-signal analysis; spectral holeburning; strain Hamiltonian; strained-quantum-well lasers; valence band structure; Capacitive sensors; Charge carrier density; Charge carrier processes; Heating; Information analysis; Nonlinear dynamical systems; Nonlinear equations; Performance analysis; Performance gain; Quantum well lasers;
Journal_Title :
Photonics Technology Letters, IEEE
