Title :
DFB lasers with monolithically integrated passive waveguide
Author :
Tanbun-Ek, T. ; Andrekson, P.A. ; Logan, R.A. ; Chu, S.N.G. ; Coblentz, D.L. ; Sergent, A.M. ; Wecht, K.W.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
7/1/1992 12:00:00 AM
Abstract :
Novel MQW integrated passive waveguide (IPW) DFB lasers have been fabricated using a selective area MOVPE growth technique. Detailed measurements of the absorption loss of the passive waveguide in the structure as well as its influences on the laser linewidth are reported for the first time. A linewidth reduction factor of more than 3 is observed as compared to a simple DFB laser despite the high absorption loss.<>
Keywords :
distributed feedback lasers; integrated optics; optical losses; optical waveguides; semiconductor growth; semiconductor junction lasers; spectral line breadth; vapour phase epitaxial growth; DFB lasers; MQW; absorption loss; laser diodes; laser linewidth; linewidth reduction factor; monolithically integrated passive waveguide; selective area MOVPE growth; semiconductors; Electrons; Epitaxial layers; Fiber lasers; Laser modes; Laser theory; Optical waveguides; Quantum well devices; Quantum well lasers; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
