DocumentCode :
936953
Title :
Polarization-insensitive superluminescent diode at 1.5 mu m with a tensile-strained-barrier MQW
Author :
Mikami, Osamu ; Noguchi, Yoshio ; Magari, Katsuaki ; Suzuku, Y.
Author_Institution :
Tokyo Univ., Japan
Volume :
4
Issue :
7
fYear :
1992
fDate :
7/1/1992 12:00:00 AM
Firstpage :
703
Lastpage :
705
Abstract :
Polarization-insensitive high-power superluminescent diodes emitting at 1.5- mu m were fabricated by using a tensile-strained-barrier MQW. Polarization difference as low as 5% and 3.8 mW optical power were obtained at 200 mA injection current.<>
Keywords :
light emitting diodes; light polarisation; superradiance; 1.5 micron; 200 mA; 3.8 mW; IR; high-power superluminescent diodes; injection current; optical power; polarisation insensitivity; tensile-strained-barrier MQW; Optical fiber polarization; Optical materials; Optical polarization; Optical sensors; Power generation; Quantum well devices; Stimulated emission; Superluminescent diodes; Tellurium; Tensile strain;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.145244
Filename :
145244
Link To Document :
بازگشت