Title :
Ingaasp/ingaasp multiple-quantum-well modulator with improved saturation intensity and bandwidth over 20 ghz
Author :
Devaux, F. ; Bigan, E. ; Ougazzaden, A. ; Pierre, B. ; Huet, F. ; Carré, M. ; Carenco, A.
Author_Institution :
CNET, Bagneux, France
fDate :
7/1/1992 12:00:00 AM
Abstract :
A single-mode modulator was realized from an AP-MOCVD grown structure. The multiple-quantum-well electroabsorptive material is made of shallow InGaAsP wells separated by InGaAsP barriers. It exhibits at 1.54 mu m (TE) a 17 dB extinction ratio for a 3 V drive voltage, a 2.7 dB on-state loss and a small-signal bandwidth over 20 GHz with 1-2 mW of coupled optical power.<>
Keywords :
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; gallium compounds; indium compounds; optical modulation; optical saturation; 1 to 2 mW; 1.54 micron; 2.7 dB; 20 GHz; 3 V; AP-MOCVD grown structure; IR; InGaAsP barriers; InGaAsP-InGaAsP; SQW; coupled optical power; drive voltage; electroabsorptive material; extinction ratio; multiple-quantum-well modulator; on-state loss; optical constants; saturation intensity; semiconductors; shallow InGaAsP wells; single-mode modulator; small-signal bandwidth; Bandwidth; Extinction ratio; Intensity modulation; Optical coupling; Optical losses; Optical materials; Optical saturation; Quantum well devices; Tellurium; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
