Title :
Transient thermal response of amplifying gate thyristors
Author :
Silard, A. ; Bodea, Mircea
Author_Institution :
Bucharest Polytechnic Institute, Department of Electron Devices, Circuits & Apparatus Faculty of Electronics & Telecommunications, Bucharest, Romania
Abstract :
A computer-aided investigation of the transient thermal behaviour of amplifying gate thyristors (a.g.t.s.) has been performed by taking into consideration the nonlinear properties of silicon over a wide range of temperature excursions.
Keywords :
computer aided analysis; electronics applications of computers; thyristors; Si nonlinear properties; amplifying gate thyristors; computer aided analysis; transient thermal behaviour;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760146
