• DocumentCode
    937146
  • Title

    A method to etch undoped silicon cantilever beams

  • Author

    Choi, Wai-shing ; Smits, Jan G.

  • Author_Institution
    Dept. of Electr. Eng., Boston Univ., MA, USA
  • Volume
    2
  • Issue
    2
  • fYear
    1993
  • fDate
    6/1/1993 12:00:00 AM
  • Firstpage
    82
  • Lastpage
    86
  • Abstract
    A simple method has been designed to etch cantilever beams oriented in the <100> direction on (100) silicon wafers without back-etching, heavily doped boron etch stop, or anodic oxidation etch stop. The scheme requires only two levels of masking. Silicon dioxide and evaporated gold film are used as passivation materials. Anisotropic etching is performed in a sodium hydroxide bath. Silicon cantilevers with background doping concentration levels and having vertical edges are produced
  • Keywords
    elemental semiconductors; etching; micromechanical devices; passivation; semiconductor technology; silicon; <100> direction; (100) Si wafers; Au-Si; NaOH bath; SiO2-Si; anisotropic etching; cantilever beams; evaporated Au film; passivation materials; two level marking; undoped Si etching; Anisotropic magnetoresistance; Boron; Design methodology; Etching; Gold; Oxidation; Passivation; Semiconductor films; Silicon compounds; Structural beams;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/84.232604
  • Filename
    232604
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=937146