Title :
A method to etch undoped silicon cantilever beams
Author :
Choi, Wai-shing ; Smits, Jan G.
Author_Institution :
Dept. of Electr. Eng., Boston Univ., MA, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
A simple method has been designed to etch cantilever beams oriented in the <100> direction on (100) silicon wafers without back-etching, heavily doped boron etch stop, or anodic oxidation etch stop. The scheme requires only two levels of masking. Silicon dioxide and evaporated gold film are used as passivation materials. Anisotropic etching is performed in a sodium hydroxide bath. Silicon cantilevers with background doping concentration levels and having vertical edges are produced
Keywords :
elemental semiconductors; etching; micromechanical devices; passivation; semiconductor technology; silicon; <100> direction; (100) Si wafers; Au-Si; NaOH bath; SiO2-Si; anisotropic etching; cantilever beams; evaporated Au film; passivation materials; two level marking; undoped Si etching; Anisotropic magnetoresistance; Boron; Design methodology; Etching; Gold; Oxidation; Passivation; Semiconductor films; Silicon compounds; Structural beams;
Journal_Title :
Microelectromechanical Systems, Journal of
