Title :
Ridge waveguide quantum-well wavelength division demultiplexing detector with four channels
Author :
Moss, D. ; Ye, F. ; Landheer, D. ; Jessop, P.E. ; Simmons, J.G. ; Champion, H.G. ; Templeton, I. ; Chatenoud, F.
Author_Institution :
Solid State Optoelectron. Consortium, Nat. Res. Council, Ottawa, Ont., Canada
fDate :
7/1/1992 12:00:00 AM
Abstract :
The authors report a four-channel wavelength-division-demultiplexing detector based on a reverse-biased GaAs/AlGaAs single-quantum-well graded index separate confined heterostructure laser having segmented contacts. They achieve better than -15-dB channel crosstalk for three-wavelength operation, and better than -10-dB crosstalk for four-wavelength operation. The optimum wavelength separation is 18 nm for three channels and 14 nm for four channels. The authors show that by optimizing the segment lengths better performance can be obtained from the same layer structure.<>
Keywords :
III-V semiconductors; aluminium compounds; crosstalk; frequency division multiplexing; gallium arsenide; multiplexing equipment; photodetectors; semiconductor junction lasers; GaAs-AlGaAs; III-V semiconductor; SQW GRINSCH laser; channel crosstalk; four-channel wavelength-division-demultiplexing detector; four-wavelength operation; optical communication; quantum confined Stark effect; reverse-biased GaAs/AlGaAs single-quantum-well graded index separate confined heterostructure laser; ridge waveguide; segment lengths; segmented contacts; three-wavelength operation; wavelength separation; Crosstalk; Demultiplexing; Detectors; HEMTs; Indium phosphide; Optical receivers; Optical waveguides; Photonic band gap; Quantum wells; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE