Title :
Investigation on single-electron dynamics in coupled GaAs-AlGaAs quantum wires
Author :
Marchi, Alex ; Bertoni, Andrea ; Reggiani, Susanna ; Rudan, Massimo
Author_Institution :
Dept. of Electron., Comput. Sci. & Syst., Bologna Univ., Italy
fDate :
3/1/2004 12:00:00 AM
Abstract :
The aim of this paper is the study of the single-electron coherent propagation in a quantum-computing gate made of coupled quantum wires. The structure under investigation is based on a two-dimensional (2-D) electron gas realized in a modulation-doped GaAs-AlGaAs heterostructure. A number of surface electrodes are used to form one-dimensional channels. The profile of the conduction band at the heterojunction has been computed numerically by solving the three-dimensional Poisson equation on the whole structure at 300 mK. Finally, a single-electron wavefunction is propagated within the so-formed quantum wire geometry by means of a 2-D, time-dependent Schrödinger solver. Results are shown for a single-qubit rotation gate implementing a quantum-NOT transformation. This work is part of a feasibility study on a solid-state realization of a universal set of quantum gates.
Keywords :
III-V semiconductors; Poisson equation; Schrodinger equation; aluminium compounds; conduction bands; gallium arsenide; numerical analysis; quantum gates; semiconductor heterojunctions; semiconductor quantum wires; two-dimensional electron gas; wave functions; 300 mK; AlGaAs-GaAs; Schrodinger equation; conduction bands; coupled GaAs-AlGaAS quantum wires; numerical analysis; quantum computing gate; single electron coherent propagation; single electron dynamics; single electron wavefunction; three-dimensional Poisson equation; Computer science; Electrodes; Electrons; Epitaxial layers; Gallium arsenide; Geometry; Heterojunctions; Quantum computing; Solid state circuits; Wires;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2003.820503