Title :
Measurement of the base diffusion profile of a narrow-basewidth transistor
Author_Institution :
Post Office Research Centre, Ipswich, UK
Abstract :
A technique for routinely determining the intrinsic base diffusion profile in a narrow-basewidth transistor is described. The technique involves the fabrication of a novel Van der Pauw device and the subsequent measurement of the sheet resistance and Hall coefficient of the base region. Diffusion profiles measured in a shallow double-diffused arsenic-emitter boron-base transistor structure by this technique are reported.
Keywords :
bipolar transistors; semiconductor doping; Hall coefficient; Van der Pauw device; base diffusion profile; narrow basewidth transistor; shallow diffused As emitter B base transistor; sheet resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760171
