Study of spin-polarized transport properties for spin-FET design optimization

Author

Saikin, Semion ; Shen, Min ; Cheng, Ming-C

Author_Institution

Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA

Volume

3

Issue

1

fYear

2004

fDate

3/1/2004 12:00:00 AM

Firstpage

173

Lastpage

179

Abstract

A Monte Carlo method developed previously for spin dynamics is applied to study spin-polarized transport properties of two-dimensional electron gas in semiconductor spin-FET structure. The specific symmetry of spin-orbit terms (Rashba and Dresselhaus) leads to strong anisotropy of spin dynamics in the low field regime. Coherent spin evolution and spin dephasing are investigated for different orientations of the device channel related to the crystallographic axes. Efforts have been made to suppress spin dephasing while conserving coherent oscillation of spin polarization required for spin-FET design. Results derived from this study provide useful information to assist in optimization of the spin-FET performance.

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; semiconductor device models; semiconductor heterojunctions; spin dynamics; spin polarised transport; two-dimensional electron gas; In_0.48Al_0.48As-In_0.53Ga_0.47As; Monte Carlo method; coherent oscillation; crystallographic axes; semiconductor spin-FET structure; spin dephasing; spin dynamics; spin evolution; spin polarization; spin polarized transport; two-dimensional electron gas; Anisotropic magnetoresistance; Crystallography; Design optimization; Electrons; Magnetic anisotropy; Magnetoelectronics; Monte Carlo methods; Particle scattering; Polarization; Spin polarized transport;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2004.824021

Filename

1278287