Field-effect and single-electron transistors based on single-walled carbon nanotubes catalyzed by Al/Ni thin films

Author

Amlani, Islamshah ; Zhang, Ruth ; Tresek, John ; Tsui, Raymond K.

Author_Institution

Phys. Sci. Lab., Motorola Labs., Tempe, AZ, USA

Volume

3

Issue

1

fYear

2004

fDate

3/1/2004 12:00:00 AM

Firstpage

202

Lastpage

209

Abstract

Growth of single-walled carbon nanotubes (SWNTs) via a chemical vapor deposition technique catalyzed by a thin Al/Ni stack is presented. Catalyst islands are defined by lithography, thin film evaporation and lift off technique. The process is fully compatible with conventional micro- and nanolithography techniques. Micrometer size semiconducting SWNT devices have been used to explore field-effect properties of the nanotubes at room temperature while smaller length semiconducting SWNT islands are used to study single-electron charging effects at low temperatures.

Keywords

aluminium; carbon nanotubes; catalysts; chemical vapour deposition; evaporation; field effect transistors; metallic thin films; nanolithography; nanotube devices; nickel; semiconductor growth; semiconductor materials; semiconductor thin films; single electron transistors; 293 to 298 K; Al-Ni; Al-Ni thin films; C; chemical vapor deposition; field-effect transistors; microlithography; nanolithography; room temperature; semiconducting SWNT devices; semiconducting SWNT islands; single-electron charging effects; single-electron transistors; single-walled carbon nanotubes; thin film evaporation; Carbon nanotubes; Chemical vapor deposition; Lithography; Nanolithography; Semiconductivity; Semiconductor nanotubes; Semiconductor thin films; Single electron transistors; Temperature; Thin film transistors;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2004.824035

Filename

1278290