• DocumentCode
    937434
  • Title

    Simple method of measuring drift-mobility profiles in thin semiconductor films

  • Author

    Pucel, R.A. ; Krumm, C.F.

  • Author_Institution
    Raytheon Company, Research Division, Waltham, USA
  • Volume
    12
  • Issue
    10
  • fYear
    1976
  • Firstpage
    240
  • Lastpage
    242
  • Abstract
    A simple method of measuring drift-mobility profiles in semiconductor films is described. It is based on the low-frequency measurement of the transconductance and gate capacitance of an f.e.t. structure as a function of gate bias. Drift mobilities of 4000 to 5000 cm2/Vs have been measured on n-type GaAs films with 1016 to 1017 cm¿3 doping levels.
  • Keywords
    carrier mobility; field effect transistors; semiconductor thin films; drift mobility measurement; gate capacitance; low frequency measurement; thin semiconductor films; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760186
  • Filename
    4239750
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=937434