Title :
Simple method of measuring drift-mobility profiles in thin semiconductor films
Author :
Pucel, R.A. ; Krumm, C.F.
Author_Institution :
Raytheon Company, Research Division, Waltham, USA
Abstract :
A simple method of measuring drift-mobility profiles in semiconductor films is described. It is based on the low-frequency measurement of the transconductance and gate capacitance of an f.e.t. structure as a function of gate bias. Drift mobilities of 4000 to 5000 cm2/Vs have been measured on n-type GaAs films with 1016 to 1017 cm¿3 doping levels.
Keywords :
carrier mobility; field effect transistors; semiconductor thin films; drift mobility measurement; gate capacitance; low frequency measurement; thin semiconductor films; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760186
