Title :
Fully ion-implanted InP/InGaAs heterojunction FET fabrication in a photodiode layer structure for monolithic integration
Author :
Walter, J.W. ; Lauterbach, Ch. ; Romer, D. ; Muller, J. ; Ebbinghaus, G.
Author_Institution :
Siemens Res. Lab., Munchen, Germany
Abstract :
A fully ion-implanted InP/InGaAs HJFET has been fabricated in a layer stucture optimised for a pin photodiode. Ion implantation has been used to form the channel, to improve the source and drain contact resistances, and to define the 1.5 mu m long gate. The HJFETs show a minimum output conductance of 14 mS/mm and a maximum transconductance of 140 mS/mm.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; ion implantation; junction gate field effect transistors; p-i-n photodiodes; 1.5 micron; 140 mS/mm; InP-InGaAs; OEIC; drain contact resistances; ion-implanted InP/InGaAs HJFET; monolithic integration; output conductance; photodiode layer structure; pin photodiode; source contact resistance; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931065
