• DocumentCode
    937442
  • Title

    Fully ion-implanted InP/InGaAs heterojunction FET fabrication in a photodiode layer structure for monolithic integration

  • Author

    Walter, J.W. ; Lauterbach, Ch. ; Romer, D. ; Muller, J. ; Ebbinghaus, G.

  • Author_Institution
    Siemens Res. Lab., Munchen, Germany
  • Volume
    29
  • Issue
    18
  • fYear
    1993
  • Firstpage
    1599
  • Lastpage
    1600
  • Abstract
    A fully ion-implanted InP/InGaAs HJFET has been fabricated in a layer stucture optimised for a pin photodiode. Ion implantation has been used to form the channel, to improve the source and drain contact resistances, and to define the 1.5 mu m long gate. The HJFETs show a minimum output conductance of 14 mS/mm and a maximum transconductance of 140 mS/mm.
  • Keywords
    III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; ion implantation; junction gate field effect transistors; p-i-n photodiodes; 1.5 micron; 140 mS/mm; InP-InGaAs; OEIC; drain contact resistances; ion-implanted InP/InGaAs HJFET; monolithic integration; output conductance; photodiode layer structure; pin photodiode; source contact resistance; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931065
  • Filename
    233065
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=937442