Title :
Monolithic broadband GaAs f.e.t. amplifiers
Author :
Pengelly, R.S. ; Turner, J.A.
Author_Institution :
Plessey Company Ltd., Romsey, UK
Abstract :
A unique monolithic X-band f.e.t. amplifier is described. Wideband matching circuits, using lumped elements, are integrated with the transistor on semi-insulating gallium arsenide to produce an amplifier chip 1.8×1.2 mm. Gains in excess of 4.5 dB over 7.5 to 11.5 GHz have been measured. The chip has been installed into a low-parasitic package to produce a gain module suitable for the microwave engineer.
Keywords :
microwave integrated circuits; monolithic integrated circuits; GaAs FET amplifier; X-band; broadband amplifier; low parasitic package; monolithic integrated circuits; wideband matching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760193
