Title :
Extraction of implantation profiles from the differential body effect of ion-implanted m.o.s. transistors
Author :
Gabler, L. ; Hoefflinger, B. ; Schneider, J. ; Zimmer, G.
Author_Institution :
University of Dortmund, Dortmund, West Germany
Abstract :
A simple d.c. method is presented for the extraction of very shallow doping profiles in the depth range 0¿200 nm in buried-channel transistors or c.c.d.s. The evaluation is free from complex corrections. Profile position and concentrations are determined with ± 5% accuracy.
Keywords :
charge-coupled devices; field effect transistors; ion implantation; semiconductor doping; CCD´s; charge coupled devices; differential body effect; implantation profiles; ion implanted MOS transistors; very shallow doping profiles;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760198
