• DocumentCode
    937550
  • Title

    Extraction of implantation profiles from the differential body effect of ion-implanted m.o.s. transistors

  • Author

    Gabler, L. ; Hoefflinger, B. ; Schneider, J. ; Zimmer, G.

  • Author_Institution
    University of Dortmund, Dortmund, West Germany
  • Volume
    12
  • Issue
    10
  • fYear
    1976
  • Firstpage
    257
  • Lastpage
    258
  • Abstract
    A simple d.c. method is presented for the extraction of very shallow doping profiles in the depth range 0¿200 nm in buried-channel transistors or c.c.d.s. The evaluation is free from complex corrections. Profile position and concentrations are determined with ± 5% accuracy.
  • Keywords
    charge-coupled devices; field effect transistors; ion implantation; semiconductor doping; CCD´s; charge coupled devices; differential body effect; implantation profiles; ion implanted MOS transistors; very shallow doping profiles;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760198
  • Filename
    4239768
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=937550