Title :
Collector-base capacitance of high frequency integrated bipolar transistors
Author :
Kwesah, A.H. ; McPhun, M.K.
Author_Institution :
University of Warwick, Engineering Department, Coventry, UK
Abstract :
A method of obtaining the correct emitter junction capacitance Cb´e from the measured device parameters is presented. This method is shown to apply to integrated bipolar transistors having fT ¿ 2.5 GHz.
Keywords :
bipolar transistors; capacitance; equivalent circuits; monolithic integrated circuits; solid-state microwave devices; collector base capacitance; emitter junction capacitance; high frequency integrated bipolar transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760213
