Title :
High-power and high-temperature operation of eight-element monolithic, 780 nm MQW laser diode array on 50 mu m centres
Author :
Shima, Akio ; Kadowaki, Takashi ; Miura, Tsuyoshi ; Miyashita, Makoto ; Kageyama, S. ; Aiga, M. ; Ikeda, Ken-ichi
Author_Institution :
Microwave Devices Lab., Mitsubishi Electr. Corp., Mizuhara Itami, Japan
Abstract :
A 50 mu m-spaced, eight-element individually addressable laser diode array with an AlGaAs multiquantum well (MQW) active layer lasing at around 780 nm has been fabricated. Highly uniform power/current characteristics up to 100 mW per element at 50 degrees C under CW conditions are realised for the first time. Within the array, variations in the operating currents and the beam characteristics such as the divergence and the wavelength are less than +or-4.6% and less than +or-2.2%, respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser transitions; semiconductor laser arrays; 100 mW; 50 degC; 50 micron; 780 nm; AlGaAs multiquantum well; CW conditions; MQW; MQW laser diode array; active layer; high-temperature operation; multibeam optical disc drive; uniform power/current characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931090
