Title :
Effect of Doping Profile Variation on GaAs Hybrid and Double-Read IMPATT Diode Performance at 60 and 94 GHz
Author :
El-Gabaly, Moustafa A. ; Mains, Richard K. ; Haddad, George I.
fDate :
10/1/1984 12:00:00 AM
Abstract :
Doping profile parameters were varied in a computer optimization of hybrid and double-read GaAs IMPATT diodes at 60 and 94 GHz. The energy-momentum transport model was used to simulate each structure. Optimum results for the various structures that were studied are presented and compared.
Keywords :
Computational modeling; Computer simulation; Diodes; Doping profiles; Gallium arsenide; Helium; P-n junctions; Predictive models; Quadratic programming; Semiconductor process modeling;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1984.1132846
