Title :
Criterion for the optimum punchthrough factor of gallium-arsenide IMPATT diodes
Author :
Blakey, P.A. ; Culshaw, Brian ; Giblin, R.A.
Author_Institution :
University College London, Department of Electronic & Electrical Engineering, London, UK
Abstract :
Simple theory predicts an optimum punchthrough factor of approximately 0.7 for gallium-arsenide IMPATTs. Computer-simulation results demonstrate good general agreement with the predictions of the theory.
Keywords :
III-V semiconductors; IMPATT diodes; gallium arsenide; solid-state microwave devices; GaAs IMPATT diode; optimum punchthrough factor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760220
