Title :
High-frequency radiation intensity noise spectrum of c.w.d.h. GaAlAs-diode lasers
Author_Institution :
Swiss Federal Institute of Technology, Department of Electronics, Zurich, Switzerland
Abstract :
Measurements of the intrinsic intensity noise spectrum of the radiation from c.w.d.h. GaAlAs-diode lasers at different pump currents are reported. The intensity noise spectrum was measured in the frequency range from 30 MHz to 8 GHz. Operating temperatures of the lasers were 10°C and ¿20°C. Stabilisation of the intensity fluctuations at currents above threshold seems to be effective at frequencies up to 8 GHz. The results are compared with computer solutions for a simple, analytical laser-noise model. A good qualitative agreement between measurements and theoretical predictions is found.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; noise; semiconductor lasers; 30 MHz to 8 GHz; CW DH GaAlAs diode lasers; high frequency radiation; intensity fluctuations; intrinsic intensity noise spectrum; stabilisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760224