• DocumentCode
    937804
  • Title

    High-frequency radiation intensity noise spectrum of c.w.d.h. GaAlAs-diode lasers

  • Author

    J¿¿ckel, H.

  • Author_Institution
    Swiss Federal Institute of Technology, Department of Electronics, Zurich, Switzerland
  • Volume
    12
  • Issue
    11
  • fYear
    1976
  • Firstpage
    289
  • Lastpage
    291
  • Abstract
    Measurements of the intrinsic intensity noise spectrum of the radiation from c.w.d.h. GaAlAs-diode lasers at different pump currents are reported. The intensity noise spectrum was measured in the frequency range from 30 MHz to 8 GHz. Operating temperatures of the lasers were 10°C and ¿20°C. Stabilisation of the intensity fluctuations at currents above threshold seems to be effective at frequencies up to 8 GHz. The results are compared with computer solutions for a simple, analytical laser-noise model. A good qualitative agreement between measurements and theoretical predictions is found.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; noise; semiconductor lasers; 30 MHz to 8 GHz; CW DH GaAlAs diode lasers; high frequency radiation; intensity fluctuations; intrinsic intensity noise spectrum; stabilisation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760224
  • Filename
    4239799