DocumentCode
937881
Title
First demonstration of two photon absorption in a semiconductor waveguide pumped by a diode laser
Author
Tsang, H.K. ; Vasil´ev, P.P. ; White, Ian H. ; Penty, Richard V. ; Aitchison, J.S.
Author_Institution
Sch. of Phys., Bath Univ., UK
Volume
29
Issue
18
fYear
1993
Firstpage
1660
Lastpage
1661
Abstract
For the first time, lasers have been used to induce a fast all-optical nonresonant nonlinearity at wavelengths well beyond the band edge in a GaAs/GaAlAs multiquantum well waveguide. Using a Q-switched diode laser, which gave optical pulses of 3.5 ps duration and 7 W peak power, an intensity-dependent transmission was recorded that was consistent with the presence of two photon absorption in the waveguide. The measured two photon absorption coefficient was 11+or-2 cm/GW.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; nonlinear optics; optical switches; optical waveguides; semiconductor quantum wells; two-photon processes; 3.5 ps; 7 W; GaAs-GaAlAs; GaAs/GaAlAs multiquantum well waveguide; Q-switched diode laser; fast all-optical nonresonant nonlinearity; intensity-dependent transmission; optical switching; semiconductor waveguide; two photon absorption coefficient;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931105
Filename
233105
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