Title :
New latch-up-free IGBT with low on-resistance
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. Coll. Swansea, UK
Abstract :
A new form of IGBT is presented which does not latch up in the on-state however hard it is driven. It also has a very low on-resistance due to the small cell width achievable and the full conductivity modulation of the channel region.
Keywords :
insulated gate bipolar transistors; power transistors; IGBT; cell width; channel region; conductivity modulation; insulated gate bipolar transistor; latch-up-free; low on-resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931108
