DocumentCode :
937946
Title :
Factors Affecting Reliability of Alloy Junction Transistors
Author :
Wahl, A.J. ; Kleimack, J.J.
Author_Institution :
Bell Telephone Labs., Inc., Murray Hill, N.J.
Volume :
44
Issue :
4
fYear :
1956
fDate :
4/1/1956 12:00:00 AM
Firstpage :
494
Lastpage :
502
Abstract :
Oxygen and water vapor, when individually in contact with the transistor surface, have been found to cause substantial and generally opposite changes in the characteristics of germanium alloy junction transistors. These changes, however, are reversible: by means of vacuum baking a reproducible set of characteristics can be repeatedly reestablished after water vapor or oxygen has caused a large change in the characteristics. Very pure forms of other ordinary gases, such as hydrogen, nitrogen, and helium, are found to have no effect on these transistors. Very nearly ideal time stability of characteristics can be obtained, even under severe aging conditions, when water vapor and oxygen are completely removed and permanently excluded from the transistor surface, although under some circumstances a very pure atmosphere of oxygen (or air) may be desirable for the p-n-p transistor.
Keywords :
Aging; Atmosphere; Gases; Germanium alloys; Helium; Hydrogen; Nitrogen; Oxygen; Stability; Water;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1956.274928
Filename :
4052039
Link To Document :
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