• DocumentCode
    937971
  • Title

    Low-noise GaAs m.e.s.f.e.t.s

  • Author

    Hewitt, B.S. ; Cox, H.M. ; Fukui, Hiroshi ; Dilorenzo, J.V. ; Schlosser, W.O. ; Iglesias, D.E.

  • Author_Institution
    Bell Laboratories, Murray Hill, USA
  • Volume
    12
  • Issue
    12
  • fYear
    1976
  • Firstpage
    309
  • Lastpage
    310
  • Abstract
    GaAs m.e.s.f.e.t.s with optimum noise figures of 1.6 dB at 6 GHz have been fabricated by projection photolithography. An equation has been developed for the calculation of optimum noise figure which gives good agreement between calculated and measured values.
  • Keywords
    field effect transistors; noise; solid-state microwave devices; 6 GHz; low noise GaAs MESFET; optimum noise figure; projection photolithography;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760238
  • Filename
    4239816
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=937971