Title :
Low-noise GaAs m.e.s.f.e.t.s
Author :
Hewitt, B.S. ; Cox, H.M. ; Fukui, Hiroshi ; Dilorenzo, J.V. ; Schlosser, W.O. ; Iglesias, D.E.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
GaAs m.e.s.f.e.t.s with optimum noise figures of 1.6 dB at 6 GHz have been fabricated by projection photolithography. An equation has been developed for the calculation of optimum noise figure which gives good agreement between calculated and measured values.
Keywords :
field effect transistors; noise; solid-state microwave devices; 6 GHz; low noise GaAs MESFET; optimum noise figure; projection photolithography;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760238
