Title :
Electric-field control in planar Gunn-effect device with Schottky-barrier anode
Author :
Wada, O. ; Yanagisawa, S. ; Takanashi, Hiroyuki
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
Abstract :
The use of a Schottky-barrier anode contact has been proposed to improve the operating characteristics of a d.c.-biased planar Gunn-effect device. It has been confirmed experimentally that the high-field region appearing near the usual ohmic anode can be eliminated by using a Schottky-barrier anode.
Keywords :
Gunn devices; logic devices; Schottky barrier anode; electric field control; high field region; planar Gunn effect device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760245
