DocumentCode
938060
Title
Analysis of multicomponent thin films on GaAs by anodic processes
Author
El-Safti, A.F.A.B. ; Weiss, B.L. ; Hartnagel, H.L.
Author_Institution
University of Newcastle upon Tyne, Department of Electrical & Electronic Engineering, Newcastle upon Tyne, UK
Volume
12
Issue
13
fYear
1976
Firstpage
322
Lastpage
324
Abstract
Results arc presented which show that Ge ions diffuse to the surface rather than the OH¿ ions diffusing into the sample during the anodisation of Ge and Al on GaAs. Anodisatiort has also been used to show the growth of GaAs during the alloying of t.f.e. ohmic contacts to GaAs.
Keywords
III-V semiconductors; gallium arsenide; semiconductor device manufacture; thin films; GaAs; Ge ions; OH- ions; anodic processes; anodisation; multicomponent thin films;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19760247
Filename
4239826
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