Title :
Design criteria for the ´hi´ doping density in hi-lo high-efficiency impatts
Author_Institution :
University College London, Department of Electronic & Electrical Engineering, London, UK
Abstract :
The influence of the ´hi´ doping level on the performance of hi-lo high-efficiency structures is considered. Computed results show the variations of various quantities as functions of ´hi´-region doping density. These results enable estimates to be made of the maximum permissible ´hi´ doping level for a range of frequencies, current densities and applications.
Keywords :
IMPATT diodes; semiconductor doping; solid-state microwave devices; hi doping level; hi lo high efficiency IMPATTS;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760252
