Title :
Long wavelength GaInAsSb-AlGaAsSb distributed-feedback lasers emitting at 2.84 μm
Author :
Hümmer, M. ; Rössner, K. ; Lehnhardt, T. ; Müller, M. ; Forchel, A. ; Werner, R. ; Fischer, M. ; Koeth, J.
Author_Institution :
Tech. Phys., Univ. Wurzburg, Germany
fDate :
5/11/2006 12:00:00 AM
Abstract :
Room-temperature continuous-wave operation of a singlemode GaInAsSb/GaSb/AlGaAsSb distributed feedback (DFB) laser is presented at a record long emission wavelength for this material system of 2.843 μm. The threshold current at 20°C is 75 mA. Mode selection was realised by metal gratings laterally patterned to a ridge waveguide. By varying the grating period, DFB emission from 2.738 up to 2.843 μm is obtained.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; ridge waveguides; semiconductor lasers; waveguide lasers; 2.738 to 2.843 micron; 2.843 micron; 20 degC; 75 mA; DFB emission; GaInAsSb-GaSb-AlGaAsSb; GaInAsSb/GaSb/AlGaAsSb DFB laser; emission wavelength; grating period; laterally patterned; long wavelength GaInAsSb-AlGaAsSb distributed-feedback lasers; metal gratings; ridge waveguide; single mode DFB laser; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060528
