Title :
Optoelectronic 1:2 demultiplexing based on resonant tunnelling diodes and pin-photodetectors
Author :
Matiss, A. ; Prost, W. ; Tegude, F.J.
Author_Institution :
Solid-State Electron. Dept., Univ. Duisburg-Essen, Duisburg, Germany
fDate :
5/11/2006 12:00:00 AM
Abstract :
A concept for 2:1 demultiplexing of an optical data stream has been developed and verified by transient simulation. The monolithic integration of broadband pin-photodiodes and resonant tunnelling diodes on InP-substrate allow the realisation of a demultiplexer circuit based on the principle of monostable-bistable logic elements (MOBILE) with very low complexity and device count. A design of two MOBILE gates is introduced and verified by simulation.
Keywords :
demultiplexing; integrated optoelectronics; optical bistability; optical information processing; optical logic; p-i-n photodiodes; photodetectors; resonant tunnelling diodes; 2:1 demultiplexing; InP-substrate; broadband pin-photodiodes; demultiplexer circuit; device count; low complexity; monolithic integration; monostable bistable logic elements; optical data stream; optoelectronic demultiplexing; pin-photodetectors; resonant tunnelling devices; resonant tunnelling diodes; transient simulation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060122
