DocumentCode
938370
Title
Metamorphic InGaAs/AlAsSb quantum wells grown on GaAs substrates for intersubband devices operating toward short-wavelength region
Author
Gozu, S. ; Ueta, A. ; Yamamoto, N. ; Akahane, K. ; Ohtani, N. ; Tsuchiya, M.
Author_Institution
Basic & Adv. Res. Dept., Nat. Inst. of Inf. & Commun. Technol., Tokyo, Japan
Volume
42
Issue
10
fYear
2006
fDate
5/11/2006 12:00:00 AM
Firstpage
600
Lastpage
601
Abstract
Metamorphic InGaAs/AlAsSb multiple quantum wells (M-MQWs) were grown on GaAs substrate, and a polarity dependent optical absorption of the M-MQWs was evaluated. Intersubband absorptions were clearly observed in the M-MQWs. Therefore, M-MQWs can be applied to the intersubband devices operating toward short-wavelength region.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical communication equipment; optical modulation; photoluminescence; quantum well devices; GaAs; GaAs substrates; InGaAs-AlAsSb; InGaAs/AlAsSb multiple quantum wells; Metamorphic InGaAs/AlAsSb quantum wells; all-optical modulator; intersubband absorptions; intersubband devices; polarity dependent optical absorption; short-wavelength region;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20060077
Filename
1633581
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