Title :
Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy
Author :
Kunert, B. ; Klehr, A. ; Reinhard, S. ; Volz, K. ; Stolz, W.
Author_Institution :
Mater. Sci. Center, Philipps-Univ., Marburg, Germany
fDate :
5/11/2006 12:00:00 AM
Abstract :
Electrical injection lasing has been verified for GaP-based broad-area Ga(NAsP)/GaP single-quantum-well heterostructures near room temperature for the first time. The lasers have been grown by metal organic vapour phase epitaxy. Owing to the comparable lattice constants of this novel material system to that of Si, this novel dilute nitride III/V laser material might be applied for optoelectronic devices integrated to Si microelectronics in the future.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; optoelectronic devices; quantum well lasers; vapour phase epitaxial growth; Ga(NAsP)-GaP; Ga(NAsP)/GaP quantum-well structures; GaP-based broad-area single-quantum-well heterostructures; Si microelectronics; lattice constants; metal organic vapour phase epitaxy; near room temperature; near room temperature electrical injection lasing; optoelectronic devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060295
