Self-gating controlled pronounced threshold hysteresis in electron Y-branch switch with quantum dots

A novel compact, monolithic memory device based on Y-branched junctions with embedded quantum dots is demonstrated. Up sweeps and down sweeps of the voltage difference between the branches lead to a pronounced threshold hysteresis exceeding 0.5 V. It is concluded that the charge state of the quantum dots and thus the hysteresis is also controlled by the self-gating in an electron Y-branch switch.