Novel 900 MHz/1.9 GHz dual-mode power amplifier employing MEMS switches for optimum matching

Author

Fukuda, Atsushi ; Okazaki, Hiroshi ; Hirota, Tetsuo ; Yamao, Yasushi

Author_Institution

NTT DoCoMo Inc., Yokosuka, Japan

Volume

14

Issue

3

fYear

2004

fDate

3/1/2004 12:00:00 AM

Firstpage

121

Lastpage

123

Abstract

A novel scheme is proposed for a compact band-switchable power amplifier that employs Micro-Electro-Mechanical System (MEMS) switches in a matching network (MN). According to the on/off status, the switches change the frequency response of the MN, and then the optimum matching can be achieved in different frequency bands. Following the proposed scheme, a dual-band GaAs FET amplifier is designed for the 0.9-GHz and 1.9-GHz bands. The experimental results exhibit the small signal gain of greater than 16 dB and the saturated output power of 31 dBm in each frequency band with adequate efficiency. The performance levels are very close to those of single-mode power amplifiers employing the same FET.

Keywords

MESFET integrated circuits; UHF integrated circuits; UHF power amplifiers; microswitches; 0.9 GHz; 1.9 GHz; GaAs; MEMS switch; band-switchable power amplifier; dual-band FET amplifier; dual-mode power amplifier; frequency band; frequency response; matching network; micro-electro-mechanical system switches; saturated output power; single-mode power amplifiers; small signal gain; Dual band; FETs; Frequency response; Gallium arsenide; Microelectromechanical systems; Micromechanical devices; Microswitches; Power amplifiers; Power generation; Switches;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2003.821496

Filename

1278387