DocumentCode :
938463
Title :
GaAs f.e.t. mixer operation with high intermediate frequencies
Author :
Loriou, B. ; Leost, J.C.
Author_Institution :
CNET, Microwave Laboratory, ICS Department, Lannion, France
Volume :
12
Issue :
15
fYear :
1976
Firstpage :
373
Lastpage :
375
Abstract :
GaAs f.e.t. mixer operation is investigated at 6 GHz when the intermediate frequency is around 1 GHz. A 3 dB improvement in noise figure is measured, compared with 30 MHz i.f. operation. Other characteristics, such as conversion gain and dynamic range, are similar. Broadband operation is also investigated. With 0.5 ¿m gate device, on s.s.b. noise figure of 5.6 dB is achieved with a conversion gain of 10 dB.
Keywords :
field effect transistors; mixers (circuits); solid-state microwave circuits; 0.5 micron gate device; 6 GHz; GaAs FET mixer operation; broadband operation; conversion gain; dynamic range; high intermediate frequencies; noise figure;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19760286
Filename :
4239875
Link To Document :
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