Title :
GaAs f.e.t. mixer operation with high intermediate frequencies
Author :
Loriou, B. ; Leost, J.C.
Author_Institution :
CNET, Microwave Laboratory, ICS Department, Lannion, France
Abstract :
GaAs f.e.t. mixer operation is investigated at 6 GHz when the intermediate frequency is around 1 GHz. A 3 dB improvement in noise figure is measured, compared with 30 MHz i.f. operation. Other characteristics, such as conversion gain and dynamic range, are similar. Broadband operation is also investigated. With 0.5 ¿m gate device, on s.s.b. noise figure of 5.6 dB is achieved with a conversion gain of 10 dB.
Keywords :
field effect transistors; mixers (circuits); solid-state microwave circuits; 0.5 micron gate device; 6 GHz; GaAs FET mixer operation; broadband operation; conversion gain; dynamic range; high intermediate frequencies; noise figure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760286
