• DocumentCode
    938509
  • Title

    Computation of the gain-bandwidth performance of an X-band active reactance compensated IMPATT amplifier

  • Author

    Aitchison, C.S. ; Bains, A.S.

  • Author_Institution
    Chelsea College, Electronics Department, London, UK
  • Volume
    12
  • Issue
    15
  • fYear
    1976
  • Firstpage
    380
  • Lastpage
    382
  • Abstract
    Results obtained from a computed gain¿frequency response of an IMPATT amplifier, operating at 9.0 GHz with active reactance compensation, are reported. Measured values of the impedance of an impatt device, at an r.f. level of + 10 dBm and a direct current of 60 mA, are used. At 16 dB gain, the ¿1 dB bandwidth improves from 240 to 1450 MHz and from 110 to 560 MHz for the unencapsulated and encapsulated diode amplifiers, respectively.
  • Keywords
    IMPATT diodes; active networks; microwave amplifiers; solid-state microwave circuits; 9.0 GHz; X-band active reactance compensated IMPATT amplifier; gain bandwidth performance; impedance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760291
  • Filename
    4239882
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=938509