• DocumentCode
    938605
  • Title

    In situ in etching technique for l.p.e. InP

  • Author

    Wrick, V. ; Scilla, G.J. ; Eastman, L.F. ; Henry, R.L. ; Swiggard, E.M.

  • Author_Institution
    Cornell University, Ithaca, USA
  • Volume
    12
  • Issue
    16
  • fYear
    1976
  • Firstpage
    394
  • Lastpage
    395
  • Abstract
    An in situ In etch technique is described for l.p.e. growth of InP. This method eliminates substrate `sensitivity¿ to orientation difficulties and removes any need for melt supersaturation to obtain good morphology. In addition, in situ etching removes any substrate pitting or type conversion which degrades actual device performance.
  • Keywords
    III-V semiconductors; epitaxial growth; etching; indium compounds; semiconductor growth; In etch technique; InP epitaxy; in situ etching; liquid phase epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760302
  • Filename
    4239896
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=938605