A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology

Author

Hedayati, Raheleh ; Lanni, Luigia ; Rodriguez, Saul ; Malm, B. Gunnar ; Rusu, Ana ; Zetterling, Carl-Mikael

Author_Institution

Sch. of Inf. & Commun. Technol., KTH R. Inst. of Technol., Kista, Sweden

Volume

35

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

693

Lastpage

695

Abstract

A monolithic bipolar operational amplifier (opamp) fabricated in 4H-SiC technology is presented. The opamp has been used in an inverting negative feedback amplifier configuration. Wide temperature operation of the amplifier is demonstrated from 25°C to 500°C. The measured closed loop gain is around 40 dB for all temperatures whereas the 3 dB bandwidth increases from 270 kHz at 25°C to 410 kHz at 500°C. The opamp achieves 1.46 V/μs slew rate and 0.25% total harmonic distortion. This is the first report on high temperature operation of a fully integrated SiC bipolar opamp which demonstrates the feasibility of this technology for high temperature analog integrated circuits.

Keywords

bipolar integrated circuits; closed loop systems; feedback; integrated circuit design; operational amplifiers; silicon compounds; wide band gap semiconductors; SiC; closed loop gain; frequency 270 kHz; frequency 410 kHz; high temperature analog integrated circuits; inverting negative feedback amplifier configuration; monolithic bipolar operational amplifier; temperature 25 degC to 500 degC; wide temperature operation; Gain; JFETs; Plasma temperature; Silicon carbide; Temperature distribution; Temperature measurement; Bipolar integrated circuits (ICs); high temperature ICs; negative feedback; operational amplifiers; operational amplifiers.;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2322335

Filename

6817534