Title :
Effect of electron-electron interactions on microwave performance of IMPATT GaAs diodes
Author :
Pribetich, J. ; Lefebvre, M. ; Allamando, E.
Author_Institution :
Université des Sciences et Techniques de Lille, Centre Hyperfréquences et Semiconducteurs, ERA au CNRS 454, Villeneuve d´Ascq, France
Abstract :
The effect of electron-electron interactions on the ionisation rate is investigated. It is shown that this effect may be a power and efficiency saturation phenomenon for GaAs IMPATT diodes. This effect may become drastic if too high current densities are used, and this particularly may be the case in the millimetric frequency range.
Keywords :
IMPATT diodes; high field effects; solid-state microwave devices; IMPATT GaAs diodes; electron electron interactions; ionisation rate; microwave performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760349
