• DocumentCode
    939075
  • Title

    Effect of electron-electron interactions on microwave performance of IMPATT GaAs diodes

  • Author

    Pribetich, J. ; Lefebvre, M. ; Allamando, E.

  • Author_Institution
    Université des Sciences et Techniques de Lille, Centre Hyperfréquences et Semiconducteurs, ERA au CNRS 454, Villeneuve d´Ascq, France
  • Volume
    12
  • Issue
    18
  • fYear
    1976
  • Firstpage
    460
  • Lastpage
    462
  • Abstract
    The effect of electron-electron interactions on the ionisation rate is investigated. It is shown that this effect may be a power and efficiency saturation phenomenon for GaAs IMPATT diodes. This effect may become drastic if too high current densities are used, and this particularly may be the case in the millimetric frequency range.
  • Keywords
    IMPATT diodes; high field effects; solid-state microwave devices; IMPATT GaAs diodes; electron electron interactions; ionisation rate; microwave performance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19760349
  • Filename
    4240014
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=939075