DocumentCode
939143
Title
Anomalous frequency dispersion of m.o.s. capacitors formed on n-type GaAs by anodic oxidation
Author
Sawada, Tsuyoshi ; Hasegawa, Hiroshi
Author_Institution
Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan
Volume
12
Issue
18
fYear
1976
Firstpage
471
Lastpage
473
Abstract
The capacitance/voltage characteristics of the metal-oxide-semiconductor system formed on n-type GaAs by anodic oxidation differ greatly from those of p-type GaAs, showing an marked anomalous frequency dispersion which is not caused by the Quast carrier diffusion mechanism, but by an anomalous formation of interface states.
Keywords
III-V semiconductors; capacitance; gallium arsenide; metal-insulator-semiconductor structures; surface electron states; MOS capacitor; anodic oxidation; anomalous frequency dispersion; capacitance voltage characteristics; interface states; n-GaAs;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19760358
Filename
4240028
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