Title :
7.9--8.4 GHz GaAs m.e.s.f.e.t. amplifier
Author :
Goel, J. ; Camisa, R.
Author_Institution :
RCA Laboratories, David Sarnoff Research Center, Princeton, USA
Abstract :
A 4-stage balanced GaAs m.e.s.f.e.t. amplifier has been developed for the 7.9--8.4 GHz satellite-communication frequency band. Linear gain of 26±0.5dB and 150 mW power at 1 dB compression were obtained across the design band. The small-signal gain, phase linearity, group delay and noise figure are described as a function of frequency. Large-signal gain saturation, 3rd-order intermodulation distortion, gain and phase against temperature and a.m.-to-p.m. conversion data are also presented.
Keywords :
field effect transistors; microwave amplifiers; solid-state microwave circuits; 7.9 to 8.4 GHz; GaAs MESFET amplifier; group delay; intermodulation distortion; linear gain; noise figure; phase linearity; small signal gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760374
