DocumentCode :
939297
Title :
A New Nonvolatile Bistable Polymer-Nanoparticle Memory Device
Author :
Lin, Heng-Tien ; Pei, Zingway ; Chen, Jun-Rong ; Hwang, Gue-Wuu ; Fan, Jui-Fen ; Chan, Yi-Jen
Author_Institution :
Ind. Technol. Res. Inst. (ITRI), Hsinchu
Volume :
28
Issue :
11
fYear :
2007
Firstpage :
951
Lastpage :
953
Abstract :
In this letter, we demonstrate a new organic bistable nonvolatile memory device that is adopting polymer-chain-stabilized gold (Au) nanoparticles in a host polymer as a memory active layer. In this letter, the Au nanoparticles are well dispersed in the host polymer so as to enhance stability of memory devices. Current-voltage characteristics show that the device switches from an initial low-conductivity state to a high-conductivity state upon applying an external electric field at room temperature. This memory can be switched ON and OFF for over 150 times without an apparent performance degradation. In addition, the memory state can retain for over 36 000 s in air. This memory device is thus considered to be a suitable candidate for flexible electronics applications.
Keywords :
flexible electronics; gold; nanoparticles; random-access storage; Au - Element; current voltage characteristics; external electric field; flexible electronics; gold nanoparticles; nonvolatile bistable memory device; polymer chain stabilized; polymer-nanoparticle memory device; temperature 293 K to 298 K; Bistable; endurance; nonvolatile; retention time;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2007.903944
Filename :
4357974
Link To Document :
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