DocumentCode :
939393
Title :
Determination of an initial mesh for computer simulation of semiconductor devices with nearly abrupt junctions
Author :
Bennett, R.J. ; Thoma, K.A.
Author_Institution :
University of Kent at Canterbury, Electronics Laboratories, Canterbury, UK
Volume :
12
Issue :
19
fYear :
1976
Firstpage :
505
Lastpage :
506
Abstract :
A computer procedure to determine the initial potential distribution in the vicinity of semiconductor junction structures is outlined. It is useful for either n+¿n or p¿n structures and has the advantage that the mesh spacing is generated in such a way that its use for modelling under nonequilibrium conditions satisfies the stability requirements outlined by Seidman and Choo.
Keywords :
electronics applications of computers; semiconductor devices; semiconductor junctions; computer simulation; initial mesh; initial potential distribution; modelling; n+-n structures; nearly abrupt junctions; p-n structures; semiconductor devices;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19760383
Filename :
4240070
Link To Document :
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