DocumentCode :
939531
Title :
A 580- \\mu W 1.8–6 GHz Multiband Switched-Resonator SiGe VCO With 0.3-V Supply Voltage
Author :
Mukhopadhyay, Rajarshi ; Lee, Chang-Ho ; Laskar, Joy
Author_Institution :
Texas Instrum., Dallas
Volume :
17
Issue :
11
fYear :
2007
Firstpage :
793
Lastpage :
795
Abstract :
This letter presents a fully integrated low-power low-voltage multiband switched-resonator differential cross-coupled voltage controlled oscillator (VCO) implemented in 0.18 SiGe-BiCMOS technology. The VCO operates with a supply voltage as low as 0.29 V, owing to the low knee-voltage provided by the technology, and consumes a total power of 580 muW. Utilizing a switched-resonator, the VCO covers a wide switched frequency range of 1.83-2.97 GHz and 4.36-6.17 GHz with measured phase noise of around 112.2 dBc/Hz with 0.29 V supply and 119.7 dBc/Hz with 1 V supply at 1 MHz offset. Since high-frequency bands experience higher phase noise than the low frequency bands, high- short microstrip line inductors have been used for the high-frequency bands. To the best of the authors´ knowledge, the reported VCO achieves the widest switched frequency tuning range with lowest core supply voltage.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF oscillators; inductors; low-power electronics; microwave oscillators; BiCMOS technology; SiGe - Binary; VCO; differential cross coupled oscillator; frequency 1.8 GHz to 6 GHz; high frequency bands; low-power electronics; low-voltage switched-resonator; microstrip line inductors; multiband switched-resonator; power 580 muW; size 0.18 mum; voltage 0.3 V; voltage controlled oscillator; AMOS varactor; BiCMOS; SiGe; cross-coupled; differential; low-power; low-voltage; multiband; switched-resonator; voltage controlled oscillator (VCO);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2007.908056
Filename :
4357999
Link To Document :
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