Noise behavior of an optically controlled GaAs MESFET

Author

Chakrabarti, P. ; Tiwari, Badri Nath ; Kumar, Suman

Author_Institution

Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India

Volume

22

Issue

2

fYear

2004

Firstpage

534

Lastpage

542

Abstract

The noise behavior of an optically controlled metal-semiconductor field-effect transistor (OPFET) is investigated theoretically. A rigorous model has been developed for computation of different noise components in OPFET. The intrinsic parameters of the metal-semiconductor-field-effect transistor (MESFET) equivalent circuit are strongly influenced by the incident optical signal, and the photogenerated carriers are found to play a significant role in deciding the overall noise performance of an OPFET. The study also reveals that the operating frequency can be adjusted suitably to make the noise behavior of the OPFET independent of the value of the incident optical power. The device exhibits a high value of noise equivalent power (NEP) that may make it less attractive for application as a photodetector.

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave field effect transistors; optical control; optical signal detection; semiconductor device models; semiconductor device noise; GaAs; GaAs MESFET; NEP; OPFET; metal-semiconductor field-effect transistor; noise behavior; noise equivalent power; optical signal; optically controlled FET; photogenerated carriers; Circuit noise; Equivalent circuits; FETs; Gallium arsenide; High speed optical techniques; MESFET circuits; Optical control; Optical devices; Optical noise; Semiconductor device noise;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2003.822674

Filename

1278496