Title :
Noise behavior of an optically controlled GaAs MESFET
Author :
Chakrabarti, P. ; Tiwari, Badri Nath ; Kumar, Suman
Author_Institution :
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
Abstract :
The noise behavior of an optically controlled metal-semiconductor field-effect transistor (OPFET) is investigated theoretically. A rigorous model has been developed for computation of different noise components in OPFET. The intrinsic parameters of the metal-semiconductor-field-effect transistor (MESFET) equivalent circuit are strongly influenced by the incident optical signal, and the photogenerated carriers are found to play a significant role in deciding the overall noise performance of an OPFET. The study also reveals that the operating frequency can be adjusted suitably to make the noise behavior of the OPFET independent of the value of the incident optical power. The device exhibits a high value of noise equivalent power (NEP) that may make it less attractive for application as a photodetector.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwave field effect transistors; optical control; optical signal detection; semiconductor device models; semiconductor device noise; GaAs; GaAs MESFET; NEP; OPFET; metal-semiconductor field-effect transistor; noise behavior; noise equivalent power; optical signal; optically controlled FET; photogenerated carriers; Circuit noise; Equivalent circuits; FETs; Gallium arsenide; High speed optical techniques; MESFET circuits; Optical control; Optical devices; Optical noise; Semiconductor device noise;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2003.822674
