A Variable Conversion Gain Star Mixer for Ka-Band Applications

Author

Lin, Che-Hung ; Chiu, Jui-Chieh ; Lin, Chih-Ming ; Lai, Yu-Ann ; Wang, Yeong-Her

Author_Institution

Nat. Cheng-Kung Univ., Tainan

Volume

17

Issue

11

fYear

2007

Firstpage

802

Lastpage

804

Abstract

A variable conversion gain star mixer for Ka-band applications has been presented. This monolithic microwave integrated circuit was implemented on AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor process with a chip size of 1.7times1.7 mm². The mixer is modified from conventional star mixer to apply dc bias. The conversion gain of the mixer, controlled by the voltage of the diodes, could be applied to meet gain compensation requirements in communication systems. From the measured results, the circuit can provide 11.9 dB conversion gain and 9.3 dB gain adjustment by controlling voltage from 0 to 0.7 V at 30 GHz.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC mixers; aluminium compounds; gallium arsenide; indium compounds; AlGaAs-InGaAs-GaAs - Interface; Ka-band applications; PHEMT; communication systems; frequency 30 GHz; gain compensation requirements; monolithic microwave integrated circuit; pseudomorphic high-electron-mobility transistor; variable conversion gain star mixer; voltage 0 V to 0.7 V; voltage control; Gain compensation; Ka-band; PHEMT; monolithic microwave integrated circuit (MMIC); star mixer;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.908059

Filename

4358001